| Issue |
Eur. Phys. J. Appl. Phys.
Volume 41, Number 1, January 2008
|
|
|---|---|---|
| Page(s) | 13 - 18 | |
| Section | Semiconductors and Related Materials | |
| DOI | https://doi.org/10.1051/epjap:2007173 | |
| Published online | 19 December 2007 | |
https://doi.org/10.1051/epjap:2007173
Phase segregation in Pb:GeSbTe chalcogenide system
1
Semiconductors Laboratory, Department of Applied Physics,
Guru Nanak Dev University, Amritsar-143005, India
2
Department of Physics, University of Botswana, Botswana
Corresponding author: rthangaraj@rediffmail.com
Received:
28
May
2007
Revised:
12
July
2007
Accepted:
4
October
2007
Published online:
19
December
2007
Effect of Pb substitution on the amorphous-crystalline transformation temperature, optical band gap and crystalline structure of Ge2Sb2Te5 has been studied. In Pb:GeSbTe chalcogenide films prepared by thermal evaporation, an amorphous to crystallization transition is observed at 124, 129, 136 and 138 °C in Pb0Ge20Sb24Te56, Pb1.6Ge19Sb26Te54, Pb3Ge17Sb28Te53 and Pb5Ge12Sb28Te55 respectively. XRD investigations of annealed samples reveal that Pb substitution retains NaCl type crystalline structure of GST but expands the lattice due to large atomic radii. The increase in amorphous-crystalline transformation temperature is followed with the increase in phase segregation. The optical gap shows marginal variations with composition.
PACS: 61.66.Dk – Alloys / 61.72.Ww – Doping and impurity implantation in other materials / 73.61.Jc – Amorphous semiconductors; glasses / 84.37.+q – Measurements in electric variables
© EDP Sciences, 2007
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