Eur. Phys. J. Appl. Phys.
Volume 40, Number 2, November 2007
|Page(s)||133 - 140|
|Section||Semiconductors and Related Materials|
|Published online||31 October 2007|
Switching phenomenon in a Se70Te30–xCdx films
Physics Department, Faculty of Education, Ain Shams University, Cairo, Egypt
2 National Center for Radiation Research and Technology, Cairo, Egypt
Corresponding author: email@example.com
Revised: 12 July 2007
Accepted: 22 August 2007
Published online: 31 October 2007
Amorphous Se70Te30–xCdx (x = 0, 10) are obtained by thermal evaporation under vacuum of bulk materials on pyrographite and glass substrates. The I – V characteristic curves for the two film compositions are typical for a memory switch. They exhibited a transition from an ohmic region in the lower field followed by non-ohmic region in the high field region in the preswitching region, which has been explained by the Poole-Frenkel effect. The temperature dependence of current in the ohmic region is found to be of thermally activated process. The mean value of the threshold voltage increases linearly with increasing film thickness in the thickness range (100–491 nm), while it decreases exponentially with increasing temperature in the temperature range (293–343 K) for both compositions. The results are explained in accordance with the electrothermal model for the switching process. The effect of Cd on these parameters is also investigated.
PACS: 77.80.Fm – Switching phenomena / 72.20.-i – Conductivity phenomena in semiconductors and insulators
© EDP Sciences, 2007
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.