| Issue |
Eur. Phys. J. Appl. Phys.
Volume 54, Number 1, April 2011
|
|
|---|---|---|
| Article Number | 10302 | |
| Number of page(s) | 4 | |
| Section | Thin Films | |
| DOI | https://doi.org/10.1051/epjap/2011100406 | |
| Published online | 13 April 2011 | |
https://doi.org/10.1051/epjap/2011100406
Incomplete oxidation in back channel of GaInZnO thin-film transistor grown by rf sputtering
1
Department of Electrical and Computer Engineering, Ajou University, 443-749 Suwon, Korea
2
Analysis Engineering Center, Samsung Advanced Institute of
Technology, 440-600 Suwon, Korea
Corresponding author: jungyol@ajou.ac.kr
Received:
17
October
2010
Accepted:
18
January
2011
Published online:
13
April
2011
Thin-film transistors (TFT's) may have a low-quality back channel in addition to the high-quality main channel. The presence of the back channel can deteriorate TFT turn-off characteristics. We studied properties of the back channel in bottom-gate GaInZnO TFT's grown by rf sputtering. X-ray photoelectron spectroscopy (XPS) results confirmed existence of low-quality oxide in the back channel. We observed that 200 °C annealing increased binding energies of metals and oxygen on the surface. This energy increase can be explained as a result of tighter bonding between metals and oxygen. When the top surface of GaInZnO was removed by Ar etching, XPS did not show such energy increase after the annealing. XPS also showed that the top surface has significantly higher In concentration compared to the bulk.
© EDP Sciences, 2011
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