Issue |
Eur. Phys. J. AP
Volume 16, Number 3, December 2001
|
|
---|---|---|
Page(s) | 187 - 193 | |
Section | Surfaces, Interfaces and Films | |
DOI | https://doi.org/10.1051/epjap:2001209 | |
Published online | 15 December 2001 |
https://doi.org/10.1051/epjap:2001209
Electrical and optical properties of amorphous Ga2Te3 films
Semiconductor Laboratory, Physics Department, Faculty of Education, Ain
Shams University, Cairo, Egypt
Corresponding author: ashraf.bekheet@mailcity.com
Received:
7
March
2001
Revised:
25
July
2001
Accepted:
17
August
2001
Published online: 15 December 2001
Ga2Te3 has been prepared in bulk and thin film forms. The
composition of films has been checked using energy dispersive X-ray
(EDX) spectroscopy technique. X-ray diffraction (XRD) measurements
have showed that the Ga2Te3 films evaporated at room temperature
substrates were amorphous. Investigation of the I-V characteristics in
amorphous Ga2Te3 films reveals that it is typical for a memory switch.
The thickness dependence of the mean value of the switching voltage Vth
is linear in the investigated range and Vth decreases exponentially with
temperature in the range (298−393 K). The switching voltage activation
energy (ε) calculated from the temperature dependence of Vth is found to
be 0.277 eV. Electrical conduction activation energy () is found to be
(0.564 eV). The agreement between the obtained value of the ratio
(0.49) and its value derived theoretically (0.5) suggests that the switching
phenomenon in amorphous Ga2Te3 films is explained according to an
electrothermal model for the switching process. The transmittance (T) of Ga2Te3 thin films, has been measured
over the wavelength range 400−2500 nm. From an analysis of the
transmittance data, the optical constants, the refractive index (n) and the
extinction coefficient (k), have been determined. Similarly the absorption
coefficient (α) measurements, have been evaluated. Allowed nondirect
transitions with optical energy gap (
) of 1.15 eV have been obtained.
PACS: 72.15.Cz – Electrical and thermal conduction in amorphous and liquid metals and alloys / 73.61.Jc, 78.66.Jg – Amorphous semiconductors; glasses
© EDP Sciences, 2001
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.