Eur. Phys. J. Appl. Phys.
Volume 39, Number 3, September 2007
|Page(s)||219 - 226|
|Section||Microelectronics and Optoelectronics|
|Published online||08 August 2007|
An accurate SPICE-compatible circuit model for power FLYMOSFETs
LAAS-CNRS, 7 Av. du Colonel Roche, 31077 Toulouse Cedex 4, France
2 Université Cadi Ayyad, Marrakech, Morocco
Corresponding author: email@example.com
Revised: 5 March 2007
Accepted: 5 June 2007
Published online: 8 August 2007
In this paper, a new SPICE-compatible circuit model for low voltage, low on-resistance power FLYMOSFETs is presented for the first time. In this new structure, the improvement of the on-resistance has been obtained by inserting floating islands in the lowly doped layer. Our modelling is based on device physics, analytical study and on experimental characterization. The inter-electrode capacitances are modelled accurately as nonlinear functions, and good agreement between simulation and measurements is found.
PACS: 84.30.Jc – Power electronics; power supply circuits / 85.30.De – Semiconductor-device characterization, design, and modeling / 07.50.-e – Electrical and electronic instruments and components
© EDP Sciences, 2007
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