| Issue |
Eur. Phys. J. Appl. Phys.
Volume 39, Number 3, September 2007
|
|
|---|---|---|
| Page(s) | 219 - 226 | |
| Section | Microelectronics and Optoelectronics | |
| DOI | https://doi.org/10.1051/epjap:2007120 | |
| Published online | 08 August 2007 | |
https://doi.org/10.1051/epjap:2007120
An accurate SPICE-compatible circuit model for power FLYMOSFETs
1
LAAS-CNRS, 7 Av. du Colonel Roche, 31077 Toulouse Cedex 4, France
2
Université Cadi Ayyad, Marrakech, Morocco
Corresponding author: agaladi@yahoo.fr
Received:
30
October
2006
Revised:
5
March
2007
Accepted:
5
June
2007
Published online:
8
August
2007
In this paper, a new SPICE-compatible circuit model for low voltage, low on-resistance power FLYMOSFETs is presented for the first time. In this new structure, the improvement of the on-resistance has been obtained by inserting floating islands in the lowly doped layer. Our modelling is based on device physics, analytical study and on experimental characterization. The inter-electrode capacitances are modelled accurately as nonlinear functions, and good agreement between simulation and measurements is found.
PACS: 84.30.Jc – Power electronics; power supply circuits / 85.30.De – Semiconductor-device characterization, design, and modeling / 07.50.-e – Electrical and electronic instruments and components
© EDP Sciences, 2007
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