Eur. Phys. J. Appl. Phys.
Volume 39, Number 3, September 2007
|Page(s)||211 - 217|
|Section||Semiconductors and Related Materials|
|Published online||12 July 2007|
Current saturation in indium oxide based ceramics
Dniepropetrovsk National University, Dniepropetrovsk,
13 Naukovyi St. 49050, Ukraine
2 Universidad Tecnológica de la Mixteca, Huajuapan de León, Oaxaca, C.P. 69000, Mexico
3 Institut für Festkörper-u. Werkstofforschung IFW Dresden, Postfach 270016, 01171 Dresden, Germany
Corresponding author: firstname.lastname@example.org
Accepted: 6 June 2007
Published online: 12 July 2007
Current-voltage dependence for In2O3-SrO ceramics contains three regions: linear at low voltages, superlinear at intermediate voltages (current is increased stronger than voltage) and sublinear at higher voltages (current is increased weaker than voltage). The appearance of sublinear region after superlinear one cannot be explained by the existing theory. Based on the experimental data (electrical measurements, SEM and XPS) a modified grain-boundary model is suggested. In the model the additional adsorption of oxygen due to a capture of electrons at the grain-boundary states is assumed. Accordingly, the barrier height is increased and current is saturated. Calculated current-voltage dependences correspond experimentally observed ones.
PACS: 72.20.-I – Conductivity phenomena in semiconductors and insulators / 73.30.+y – Surface double layers, Schottky barriers, and work functions / 73.20.-r – Electron states at surfaces and interfaces
© EDP Sciences, 2007
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