Eur. Phys. J. Appl. Phys.
Volume 38, Number 3, June 2007
|Page(s)||221 - 225|
|Section||Semiconductors and Related Materials|
|Published online||13 June 2007|
Redistribution of nitrogen localized states in GaAsN layer doped Silicon
Laboratoire de Photovoltaïque et de Semiconducteur, Institut
National de Recherche Scientifique et Technique, BP 95, Hammam-Lif 2050,
2 Laboratoire de Photonique et de Nanostructures, CNRS, Route de Nozay, 91460 Marcoussis, France
Corresponding author: Abdellatif.Hamdouni@fst.rnu.tn
Revised: 6 March 2007
Accepted: 27 April 2007
Published online: 13 June 2007
Si-doped and undoped GaAs1-xNx layers are grown by molecular beam epitaxy (MBE) on GaAs(001) substrate with low nitrogen content. The Si-doped effect has been analyzed by photoluminescence (PL) measurements. At low laser power excitation the PL spectra of undoped layer are formed by GaAsN band level and several features attributed to the nitrogen localized states. For Si-doped layer, the GaAs1-xNxNx band level disappears and the large band attributed to the nitrogen localized states changes the form. At high laser power excitation, the PL spectrum is formed by only one peak corresponding to the most dominating nitrogen localized state. By comparing the doped and undoped layers, we note that the presence of silicon in the structure reduce the exciton bound energy to the nitrogen localized states.
PACS: 71.35.-y – Excitons and related phenomena / 71.55.Eq – III-V semiconductors / 73.21.Ac – Multilayers / 81.15.Hi – Molecular, atomic, ion, and chemical beam epitaxy
© EDP Sciences, 2007
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