Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|Page(s)||313 - 316|
|Published online||15 July 2004|
Investigation of recombination processes involving defect-related states in (Ga,In)(As,Sb,N) compounds
Institute of Physics, Wroclaw University of Technology
Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland
2 Laboratoire de Photonique et de Nanostructures, CNRS Route de Nozay, 91460 Marcoussis, France
Corresponding author: firstname.lastname@example.org
Accepted: 28 January 2004
Published online: 15 July 2004
Recombination processes in GaAsN, GaInAsN, and GaAsSbN compounds have been analysed and compared. The following properties like: broad photoluminescence band at energy of ~ 0.85 eV, an emission band aproximately 80 meV below band gap energy, and annealing-induced blue shift of the energy gap have been found for all three compounds. In order to explain these features a simple band gap diagram with N defect-related levels close to conduction band edge and fluctuations in the energy of the conduction band minimum has been proposed.
PACS: 78.55.Cr – III-V semiconductors / 71.35.Cc – Intrinsic properties of excitons; optical absorption spectra
© EDP Sciences, 2004
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