| Issue |
Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004
Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|
|
|---|---|---|
| Page(s) | 313 - 316 | |
| Section | Spectroscopic techniques | |
| DOI | https://doi.org/10.1051/epjap:2004056 | |
| Published online | 15 July 2004 | |
https://doi.org/10.1051/epjap:2004056
Investigation of recombination processes involving defect-related states in (Ga,In)(As,Sb,N) compounds
1
Institute of Physics, Wroclaw University of Technology
Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland
2
Laboratoire de Photonique et de Nanostructures,
CNRS Route de Nozay, 91460 Marcoussis, France
Corresponding author: robert.kudrawiec@pwr.wroc.pl
Received:
18
August
2003
Accepted:
28
January
2004
Published online: 15 July 2004
Recombination processes in GaAsN, GaInAsN, and GaAsSbN compounds have been analysed and compared. The following properties like: broad photoluminescence band at energy of ~ 0.85 eV, an emission band aproximately 80 meV below band gap energy, and annealing-induced blue shift of the energy gap have been found for all three compounds. In order to explain these features a simple band gap diagram with N defect-related levels close to conduction band edge and fluctuations in the energy of the conduction band minimum has been proposed.
PACS: 78.55.Cr – III-V semiconductors / 71.35.Cc – Intrinsic properties of excitons; optical absorption spectra
© EDP Sciences, 2004
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