Eur. Phys. J. AP
Volume 1, Number 1, January 1998
|Page(s)||35 - 38|
|Published online||15 January 1998|
Anti-Stokes luminescence in nitrogen doped GaAs1−xPx alloys*
Département de Physique,
Faculté des Sciences de Tunis, Université de Tunis II,
2 Campus Universitaire, 1060 le Belvédère, Tunisie and Groupe d'Étude des Semiconducteurs, Université de Montpellier II, CNRS, 34095 Montpellier, Cedex 5, France
Corresponding author: firstname.lastname@example.org
Revised: 21 July 1997
Accepted: 10 September 1997
Published online: 15 January 1998
In indirect band gap alloys, the Nx levels of the excitons bound to nitrogen have been resonantly excited. The detection of the photoluminescence (PL) at energies greater than the excitation energy (Anti-Stokes Luminescence (ASL)) shows a new PL band which appears at temperatures lower than 40 K. Its mean energy 2.205 eV is nearly independent of the alloy composition. We investigate ASL as a function of excitation photon energy, excitation power and temperature. Moreover ASL has been time resolved.
PACS: 78.55.- m – Photoluminescence / 78.55.Cr – III-V semiconductors
© EDP Sciences, 1998
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