| Issue |
Eur. Phys. J. AP
Volume 1, Number 1, January 1998
|
|
|---|---|---|
| Page(s) | 35 - 38 | |
| DOI | https://doi.org/10.1051/epjap:1998105 | |
| Published online | 15 January 1998 | |
https://doi.org/10.1051/epjap:1998105
Anti-Stokes luminescence in nitrogen doped GaAs1−xPx alloys*
1
Département de Physique,
Faculté des Sciences de Tunis, Université de Tunis II,
2
Campus Universitaire, 1060 le Belvédère, Tunisie and Groupe d'Étude des Semiconducteurs, Université de Montpellier II,
CNRS, 34095 Montpellier, Cedex 5, France
Corresponding author: scalbert@ges.univ-montp2.fr
Received:
4
February
1997
Revised:
21
July
1997
Accepted:
10
September
1997
Published online: 15 January 1998
In indirect band gap 
alloys, the Nx levels of the excitons bound to nitrogen
have been resonantly excited. The detection of the photoluminescence (PL) at energies
greater than the excitation energy (Anti-Stokes Luminescence (ASL)) shows a new PL
band which appears at temperatures lower than 40 K. Its mean energy 2.205 eV is nearly
independent of the alloy composition. We investigate ASL as a function of excitation
photon energy, excitation power and temperature. Moreover ASL has been time
resolved.
PACS: 78.55.- m – Photoluminescence / 78.55.Cr – III-V semiconductors
© EDP Sciences, 1998
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