| Issue |
Eur. Phys. J. Appl. Phys.
Volume 38, Number 3, June 2007
|
|
|---|---|---|
| Page(s) | 217 - 219 | |
| Section | Semiconductors and Related Materials | |
| DOI | https://doi.org/10.1051/epjap:2007090 | |
| Published online | 13 June 2007 | |
https://doi.org/10.1051/epjap:2007090
Preparation and characterization of sprayed FTO thin films
1
Laboratoire de Physique des Matériaux, Université Mohammed V,
Agdal, Rabat, Morocco
2
Departamento de Física Aplicada C-XII, Universidad Autónoma
de Madrid, Madrid, Spain
Corresponding author: a-lefdil@fsr.ac.ma
Received:
12
January
2007
Accepted:
23
April
2007
Published online:
13
June
2007
Fluorine doped tin oxide (FTO) thin films have been prepared by spray pyrolysis technique with no further annealing. Films with 2.5% of fluorine grown at 400 °C present a single phase and exhibit a tetragonal structure with lattice parameters a = 4.687 Å and c = 3.160 Å. Scanning electron micrographs showed homogeneous surfaces with average grain size around 190 nm. The films are transparent in the visible zone and exhibit a high reflectance in the near infrared region. The best electrical resistivity was 6.3 × 10-4 Ω cm for FTO with 2.5% of fluorine. The ratio of transmittance in the visible to the sheet resistance are in the 0.57 × 10-2–1.96 × 10-2 Ω-1 range.
PACS: 81.15.Rs – Spray coating techniques / 73.61.Le – Other inorganic semiconductors / 68.55.a – Nucleation and growth
© EDP Sciences, 2007
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