Eur. Phys. J. Appl. Phys.
Volume 47, Number 3, September 2009
|Number of page(s)||6|
|Section||Semiconductors and Devices|
|Published online||12 June 2009|
Photoluminescence study of nitrogen effects on confined states in GaAs1−xNxGaAs quantum wells
Laboratoire de Photovoltaïque, des Semiconducteurs et des
Nanostructures, Centre de Recherche et des Technologies de l'Énergie, BP
95, Hammam-Lif 2050, Tunisia
2 Laboratoire de Photonique et de Nanostructures, CNRS, Route de Nozay, 91460 Marcoussis, France
Corresponding author: firstname.lastname@example.org
Accepted: 7 April 2009
Published online: 12 June 2009
Modulation doped heterostructures GaAs/GaAsNx/GaAs/Al0.3Ga0.7As:δSi with GaAsNx Quantum Wells (QW) with different nitrogen contents x have been grown by molecular beam epitaxy and investigated by photoluminescence (PL) spectroscopy. We have found that at low temperature the photoluminescence spectra are essentially formed by two structures observed at 1.51 eV and 1.47 eV attributed to excitonic transitions in GaAs layer, and in GaAsNx QW, respectively. The Band Anticrossing Model (BAC) has been adopted in order to confirm the nature of the transitions in GaAsNx QW's. The band structure of -doped GaAs/GaAsNx/GaAs/Al0.3Ga0.7As:δSi has been studied theoretically by using the finite differences method to self-consistently and simultaneously solve Schrödinger and Poisson equations written within the Hartree approximation. We find in this way good agreement between our measured and our calculated values for the transition energies in our GaAsNx QW's.
PACS: 61.82.FK – Semiconductors / 73.21.FG – Quantum wells / 47.11.BC – Finite difference methods
© EDP Sciences, 2009
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