Full characterization at 904 nm of large area Si p-n junction photodetectors produced by LID technique

¹ Solar Cells and Applied Physics Center, Ministry of Science and Technology, Baghdad, Iraq
² NASSR State Company, Ministry of Industry and Minerals, Baghdad, Iraq
³ School of Applied Sciences, University of Technology, Baghdad, Iraq
⁴ PO Box 55159, Baghdad 12001, Iraq

Corresponding author: odayata2001@yahoo.com

Received: 12 September 2006
Accepted: 28 September 2006
Published online: 31 January 2007

Abstract

In this paper, we report the experimental data of photoresponse namely; voltage responsivity and speed of response at λ = 904 nm of silicon photodiode formed by pulsed laser-induced diffusion technique. Experimental results demonstrated that the photodiode parameters strongly depend on the laser energy and substrate temperature. Maximum Responsivity obtained for p-n junctions photodetectors prepared by laser fluence of 9.17 J/cm² for Al-doped Si and 10.03 J/cm² for Sb-doped Si at substrate temperature (T_s) of 598 K. The pulse response waveform of photodetectors illustrated that the rise time is not dominated by RC. Non-linearity deviation coefficient was improved by factors 1.6 for and 2.7 for for Al-doped Si and Sb-doped Si photodetectors respectively when T_s is raised from 300 K to 598 K.