Eur. Phys. J. Appl. Phys.
Volume 44, Number 1, October 2008
|Page(s)||43 - 46|
|Section||Semiconductors and Devices|
|Published online||19 August 2008|
Photoresponsivity enhancement of ZnO/Si photodiodes through use of an ultrathin oxide interlayer
Department of Electro-optical Engineering, National Taipei University of Technology, 1, Sec. 3, Chung-Hsiao E. Rd., Taipei 106, Taiwan, P.R. China
Corresponding author: firstname.lastname@example.org
Revised: 4 June 2008
Accepted: 3 July 2008
Published online: 19 August 2008
Photodiodes with a p-ZnO/oxide/n-Si substrate structure were fabricated. The N-In codoped p-type ZnO films were deposited by ultrasonic spray pyrolysis on a (111)-oriented silicon substrate with a thin oxide layer. A photocurrent of ~ 4.99 × 10-5 A was measured at a reverse bias of 1 V, and a photocurrent to dark current contrast ratio of almost five orders of magnitude was found. The photodiode responses exhibited three regions of behaviour: around 400 nm, between 400 nm–700 nm, and between 700 nm–1000 nm, denoted as regions A, B, and C, respectively. Region A corresponds to band-to-band absorption in the ZnO film, region B to band-to-deep level absorption in the ZnO film, and region C to band edge absorption in the Si substrate.
PACS: 77.84.Bw – Elements, oxides, nitrides, borides, carbides, chalcogenides, etc. / 73.40.Ty – Semiconductor-insulator-semiconductor structures / 81.15.Rs – Spray coating techniques / 85.60.Dw – Photodiodes; phototransistors; photoresistors
© EDP Sciences, 2008
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