Eur. Phys. J. AP
Volume 23, Number 3, September 2003
|Page(s)||149 - 205|
|Published online||15 September 2003|
Overview of antimonide based III-V semiconductor epitaxial layers and their applications at the center for quantum devices
Center for Quantum Devices, Northwestern University, Evanston, IL 60208, USA
Corresponding author: email@example.com
Revised: 22 April 2003
Accepted: 26 June 2003
Published online: 15 September 2003
The properties of Sb-based III-V semiconductor compounds for optoelectronic applications in the mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) range were reviewed. The growths of the Sb-based binary, ternary and quaternary were studied by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD). The structural, optical and electrical characterizations were carried out. Focal plane array, photoconductors and photodiodes were fabricated for the MWIR and LWIR range. Doublehetero structure (DH), multi-quantum well (MQW) and strained superlattice (SSL) lasers in the 3–5 μm range were fabricated. InAs-GaSb type-II superlattices were designed, grown and fabricated into photodetectors for the MWIR and LWIR range.
PACS: 71.20.Nr – Semiconductor compounds / 71.55.Eq – III-V semiconductors / 73.21.Cd – Superlattices
© EDP Sciences, 2003
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