Eur. Phys. J. Appl. Phys.
Volume 76, Number 1, October 2016
|Number of page(s)||8|
|Section||Semiconductors and Devices|
|Published online||10 October 2016|
Fabrication and characterization of In0.83Al0.17N based MSM visible photodiode
School of Physics, Universiti Sains Malaysia (USM), 11800 Pulau Pinang, Malaysia
a e-mail: email@example.com
Revised: 9 August 2016
Accepted: 1 September 2016
Published online: 10 October 2016
In this work, we report on the growth of In0.83Al0.17N film on p-type Si (1 1 1) substrate for metal-semiconductor-metal (MSM) photodiode application. The film was synthesized by reactive magnetron co-sputtering technique on Si (1 1 1) substrate in Ar and N2 mixture at 300 °C. The X-ray diffraction analysis revealed (0 0 2) oriented diffraction peak corresponding to nanocrystalline InAlN. The band gap of In0.83Al0.17N film was estimated from UV-vis reflectance measurement and it was found to be 2.38 eV. To fabricate In0.83Al0.17N based MSM photodiode, Pt contacts were deposited on the film through RF magnetron sputtering. Upon exposure to 520 nm light, the Pt/In0.83Al0.17N/Pt photodiode displayed a sharp rise in the value of current. The photodiode exhibited a high sensitivity (4.8×103) and current gain (48.1) at a bias voltage of 5 V. The response and recovery time were calculated to be 0.62 and 0.63 s respectively. The results of present work demonstrate that the sputtered grown InAlN film is a promising material for the MSM photodiode application.
© EDP Sciences, 2016
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