Eur. Phys. J. Appl. Phys.
Volume 35, Number 1, July 2006
|Page(s)||13 - 15|
|Section||Microelectronics and Optoelectronics|
|Published online||06 July 2006|
Indium oxide violet photodiodes
Department of Electro-optical Engineering, National Taipei University of Technology, 1, sec. 3, Chung-Hsiao E. Rd., Taipei 106, Taiwan, Republic of China
Corresponding author: firstname.lastname@example.org
Revised: 19 April 2006
Accepted: 28 April 2006
Published online: 6 July 2006
Indium oxide (In2O3) violet photodiodes were fabricated. The In2O3 layers were from oxidation of InN deposited by magnetron reactive sputtering. It was found the photocurrent approximately 5.06 × 10−4 A at a bias of 2 V and a photocurrent to dark current contrast ratio higher than around two orders of magnitude. The reverse leakage current prior to breakdown is around 10−5 A. The photodiodes exhibited a narrow responsive region at wavelength from 400 nm to 440 nm. The values of responsivity and quantum efficiency (QE) at 420 nm at biases of 2 V were 0.1985 A/W and 58.62%, respectively.
PACS: 71.20.Nr – Semiconductor compounds / 77.84.Bw – Elements, oxides, nitrides, borides, carbides, chalcogenides, etc. / 85.60.Dw – Photodiodes; phototransistors; photoresistors
© EDP Sciences, 2006
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