| Issue |
Eur. Phys. J. Appl. Phys.
Volume 35, Number 1, July 2006
|
|
|---|---|---|
| Page(s) | 13 - 15 | |
| Section | Microelectronics and Optoelectronics | |
| DOI | https://doi.org/10.1051/epjap:2006069 | |
| Published online | 06 July 2006 | |
https://doi.org/10.1051/epjap:2006069
Indium oxide violet photodiodes
Department of Electro-optical Engineering, National Taipei University of Technology, 1, sec. 3, Chung-Hsiao E. Rd., Taipei 106, Taiwan, Republic of China
Corresponding author: ocean@ntut.edu.tw
Received:
30
January
2006
Revised:
19
April
2006
Accepted:
28
April
2006
Published online:
6
July
2006
Indium oxide (In2O3) violet photodiodes were fabricated. The In2O3 layers were from oxidation of InN deposited by magnetron reactive sputtering. It was found the photocurrent approximately 5.06 × 10−4 A at a bias of 2 V and a photocurrent to dark current contrast ratio higher than around two orders of magnitude. The reverse leakage current prior to breakdown is around 10−5 A. The photodiodes exhibited a narrow responsive region at wavelength from 400 nm to 440 nm. The values of responsivity and quantum efficiency (QE) at 420 nm at biases of 2 V were 0.1985 A/W and 58.62%, respectively.
PACS: 71.20.Nr – Semiconductor compounds / 77.84.Bw – Elements, oxides, nitrides, borides, carbides, chalcogenides, etc. / 85.60.Dw – Photodiodes; phototransistors; photoresistors
© EDP Sciences, 2006
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.