| Issue |
Eur. Phys. J. Appl. Phys.
Volume 36, Number 1, October 2006
|
|
|---|---|---|
| Page(s) | 1 - 4 | |
| Section | Semiconductors and Related Materials | |
| DOI | https://doi.org/10.1051/epjap:2006101 | |
| Published online | 06 October 2006 | |
https://doi.org/10.1051/epjap:2006101
Effect of annealing temperature on properties of ZnO thin films on Si(111) substrates by magnetron sputtering
Institute of Semiconductor, Shandong Normal University, Jinan 250014, P.R.
China
Corresponding author: zhuanghuizhao@sdnu.edu.cn
Received:
7
May
2006
Revised:
21
June
2006
Accepted:
24
June
2006
Published online:
6
October
2006
ZnO thin films were firstly prepared on Si(111) substrates using radio frequency magnetron sputtering system. Then the samples were annealed at different temperature in oxygen ambient and their properties were investigated particularly as a function of annealing temperature. The microstructure, morphology and optical property of ZnO films were studied by XRD, AFM, FTIR and PL. The results show that the increase of annealing temperature leads to the improvement in the crystal quality.
PACS: 68.55.-a – Thin film structure and morphology / 81.05.Dz – II-VI semiconductors / 81.15.Cd – Deposition by sputtering
© EDP Sciences, 2006
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