Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|Page(s)||301 - 303|
|Published online||15 July 2004|
Defects in high temperature-pressure treated Czochralski silicon detected by photoluminescence and related methods
Institute of Electron Technology, Al. Lotnikow 32/46, 02-668
2 Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw, Poland
3 Institute of Physics, PAS, Al. Lotników 32/46, 02-668 Warsaw, Poland
Corresponding author: email@example.com
Accepted: 31 December 2003
Published online: 15 July 2004
Defects in oxygen-containing Czochralski silicon (Cz-Si) subjected to 2-steps pre-annealing at 720–1000 K under 105 Pa and next treated at 1170–1400 K (HT) under high hydrostatic pressure (HP, up to 1.2 GPa) were investigated by photoluminescence, infrared absorption and related methods. Microstructure of HT − HP treated Cz-Si is critically dependent on nucleation centres for oxygen precipitation created by pre-annealing.
PACS: 78.55.-m – Photoluminescence, properties and materials / 81.40.Vw – Pressure treatment
© EDP Sciences, 2004
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.