Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|Page(s)||301 - 303|
|Published online||15 July 2004|
Defects in high temperature-pressure treated Czochralski silicon detected by photoluminescence and related methods
Institute of Electron Technology, Al. Lotnikow 32/46, 02-668
2 Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw, Poland
3 Institute of Physics, PAS, Al. Lotników 32/46, 02-668 Warsaw, Poland
Corresponding author: firstname.lastname@example.org
Accepted: 31 December 2003
Published online: 15 July 2004
Defects in oxygen-containing Czochralski silicon (Cz-Si) subjected to 2-steps pre-annealing at 720–1000 K under 105 Pa and next treated at 1170–1400 K (HT) under high hydrostatic pressure (HP, up to 1.2 GPa) were investigated by photoluminescence, infrared absorption and related methods. Microstructure of HT − HP treated Cz-Si is critically dependent on nucleation centres for oxygen precipitation created by pre-annealing.
PACS: 78.55.-m – Photoluminescence, properties and materials / 81.40.Vw – Pressure treatment
© EDP Sciences, 2004
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