| Issue |
Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004
Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|
|
|---|---|---|
| Page(s) | 305 - 307 | |
| Section | Spectroscopic techniques | |
| DOI | https://doi.org/10.1051/epjap:2004090 | |
| Published online | 15 July 2004 | |
https://doi.org/10.1051/epjap:2004090
The influence of crystal imperfections on the shape of exciton emission spectrum in ZnO single crystals
Institute of Semiconductor Physics, National Academy of Sciences
of Ukraine, 45 Prospect Nauky, Kyiv 03028, Ukraine
Corresponding author: khomen@lumin.semicond.kiev.ua
Received:
2
July
2003
Accepted:
28
January
2004
Published online: 15 July 2004
A distortion of exciton emission spectrum, namely, relative decrease of free exciton band intensity with respect to that of its phonon replicas in undoped as-grown ZnO single crystals has been shown to result from enhanced reabsorption of shorter wavelength emission in the crystal due to formation of optical absorption tail. Some crystal imperfections, in all probability, dislocations decorated with shallow donors are supposed to be responsible for the effect.
PACS: 61.72.Lk – Linear defects: dislocations, disclinations / 63.20.-e – Phonons in crystal lattices / 78.55.Et – II-VI semiconductors
© EDP Sciences, 2004
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