| Issue |
Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004
Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|
|
|---|---|---|
| Page(s) | 415 - 418 | |
| Section | Multi-techniques investigations | |
| DOI | https://doi.org/10.1051/epjap:2004119-10 | |
| Published online | 15 July 2004 | |
https://doi.org/10.1051/epjap:2004119-10
Effect of high pressure-temperature on silicon layered structures as determined by X-ray diffraction and electron microscopy
1
Institute of Physics, PAS, Al. Lotnikow 32/46, 02-668 Warsaw, Poland
2
Institute of Electron Technology, Al. Lotnikow 46, 02-668 Warsaw, Poland
3
Institute of Semiconductor Physics, RAS, 630090 Novosibirsk, Russia
Corresponding author: bakmi@ifpan.edu.pl
Received:
4
July
2003
Accepted:
28
January
2004
Published online: 15 July 2004
Defects in the Si layered structures, Si:H(D), prepared by implantation with H2+/D+, and their changes resulting from the treatment under enhanced pressure (HP), were investigated by X-ray diffraction and transmission electron microscopy (XTEM). Such treatment affects out-diffusion of hydrogen (deuterium) as well as the shape and concentration of the H(D)-filled cavities. The relation between X-ray and XTEM results is discussed.
PACS: 78.55.-m – Photoluminescence, properties and materials / 61.72.Tt – Doping and impurity implantation in germanium and silicon / 81.40.Vw – Pressure treatment
© EDP Sciences, 2004
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