Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|Page(s)||415 - 418|
|Published online||15 July 2004|
Effect of high pressure-temperature on silicon layered structures as determined by X-ray diffraction and electron microscopy
Institute of Physics, PAS, Al. Lotnikow 32/46, 02-668 Warsaw, Poland
2 Institute of Electron Technology, Al. Lotnikow 46, 02-668 Warsaw, Poland
3 Institute of Semiconductor Physics, RAS, 630090 Novosibirsk, Russia
Corresponding author: email@example.com
Accepted: 28 January 2004
Published online: 15 July 2004
Defects in the Si layered structures, Si:H(D), prepared by implantation with H2+/D+, and their changes resulting from the treatment under enhanced pressure (HP), were investigated by X-ray diffraction and transmission electron microscopy (XTEM). Such treatment affects out-diffusion of hydrogen (deuterium) as well as the shape and concentration of the H(D)-filled cavities. The relation between X-ray and XTEM results is discussed.
PACS: 78.55.-m – Photoluminescence, properties and materials / 61.72.Tt – Doping and impurity implantation in germanium and silicon / 81.40.Vw – Pressure treatment
© EDP Sciences, 2004
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