Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|Page(s)||415 - 418|
|Published online||15 July 2004|
Effect of high pressure-temperature on silicon layered structures as determined by X-ray diffraction and electron microscopy
Institute of Physics, PAS, Al. Lotnikow 32/46, 02-668 Warsaw, Poland
2 Institute of Electron Technology, Al. Lotnikow 46, 02-668 Warsaw, Poland
3 Institute of Semiconductor Physics, RAS, 630090 Novosibirsk, Russia
Corresponding author: firstname.lastname@example.org
Accepted: 28 January 2004
Published online: 15 July 2004
Defects in the Si layered structures, Si:H(D), prepared by implantation with H2+/D+, and their changes resulting from the treatment under enhanced pressure (HP), were investigated by X-ray diffraction and transmission electron microscopy (XTEM). Such treatment affects out-diffusion of hydrogen (deuterium) as well as the shape and concentration of the H(D)-filled cavities. The relation between X-ray and XTEM results is discussed.
PACS: 78.55.-m – Photoluminescence, properties and materials / 61.72.Tt – Doping and impurity implantation in germanium and silicon / 81.40.Vw – Pressure treatment
© EDP Sciences, 2004
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.