| Issue |
Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004
Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|
|
|---|---|---|
| Page(s) | 297 - 300 | |
| Section | Spectroscopic techniques | |
| DOI | https://doi.org/10.1051/epjap:2004080 | |
| Published online | 15 July 2004 | |
https://doi.org/10.1051/epjap:2004080
Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy
Key Laboratory of Semiconductor Materials Science, Institute of
Semiconductors, Chinese Academy of
Sciences, PO Box 912, Beijing 100083, P.R. China
Corresponding author: xlye@red.semi.ac.cn
Received:
10
July
2003
Accepted:
18
December
2003
Published online: 15 July 2004
The in-plane optical anisotropy of several GaAs/AlGaAs quantum well samples
with different well widths has been measured at room temperature by
reflectance-difference spectroscopy (RDS). The RDS line shapes are found to
be similar in all the samples examined here, which dominantly consist of
two peak-like signals corresponding to 1HH
1E and
1LH1E transition. As the well width is decreased, or the 1 ML
InAs layer is inserted at one interface, the intensity of the anisotropy
increases quickly. Our detail analysis shows that the anisotropy mainly arises
from the anisotropic interface roughness. The results demonstrate that the
RDS technique is sensitive to the interface structures.
PACS: 78.66.Fd – III-V semiconductors / 78.20.Bh – Theory, models, and numerical simulation / 78.20.Fm – Birefringence
© EDP Sciences, 2004
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