Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|Page(s)||297 - 300|
|Published online||15 July 2004|
Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy
Key Laboratory of Semiconductor Materials Science, Institute of
Semiconductors, Chinese Academy of
Sciences, PO Box 912, Beijing 100083, P.R. China
Corresponding author: email@example.com
Accepted: 18 December 2003
Published online: 15 July 2004
The in-plane optical anisotropy of several GaAs/AlGaAs quantum well samples with different well widths has been measured at room temperature by reflectance-difference spectroscopy (RDS). The RDS line shapes are found to be similar in all the samples examined here, which dominantly consist of two peak-like signals corresponding to 1HH1E and 1LH1E transition. As the well width is decreased, or the 1 ML InAs layer is inserted at one interface, the intensity of the anisotropy increases quickly. Our detail analysis shows that the anisotropy mainly arises from the anisotropic interface roughness. The results demonstrate that the RDS technique is sensitive to the interface structures.
PACS: 78.66.Fd – III-V semiconductors / 78.20.Bh – Theory, models, and numerical simulation / 78.20.Fm – Birefringence
© EDP Sciences, 2004
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