| Issue |
Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004
Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|
|
|---|---|---|
| Page(s) | 145 - 148 | |
| Section | Defects in silicon | |
| DOI | https://doi.org/10.1051/epjap:2004131 | |
| Published online | 15 July 2004 | |
https://doi.org/10.1051/epjap:2004131
Thermoelectric properties of Czochralski-grown silicon at high pressure up to 16 GPa
1
Institute of Metal Physics, Ural Division of RAS, GSP-170,
Yekaterinburg, 620219, Russia
2
Institute of Electron Technology, Al. Lotnikow 32/46, PL-02-668
Warsaw, Poland
Corresponding author: vladimir.v@imp.uran.ru
Received:
4
July
2003
Accepted:
28
January
2004
Published online: 15 July 2004
The thermoelectric power of silicon micro-samples grown by Czochralski method (Cz-Si) and annealed at 450 °C has been investigated at enhanced pressure up to 16 GPa. The correlation has been established between the thermoelectric power and pressure of the semiconductor-metal phase transition, on the one hand, and mechanical properties (microhardness, compressibility), on the other, for Cz-Si with different content of oxygen. Possible application of the studied properties for micro-device technology is discussed.
PACS: 72.20.Pa – Thermoelectric and thermomagnetic effects / 72.80.Cw – Elemental semiconductors / 71.30.+h – Metal-insulator transitions and other electronic transitions
© EDP Sciences, 2004
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