Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|Page(s)||419 - 421|
|Published online||15 July 2004|
Application of the Kim & Chair viscosity model to molten binary GaSb and InSb semiconductors
Dpto. Física de Materiales Universidad
Autónoma de Madrid 28049 Madrid, Spain
Corresponding author: firstname.lastname@example.org
Accepted: 28 January 2004
Published online: 15 July 2004
Since the majority of bulk crystal growth methods involves melt freezing, the knowledge of the molten state properties is one of the most important parameter coming into the improvement of the growing crystal and method. It is well known that melting of covalent semiconductor destroys covalent bonds and induces metallic type liquid. The phenomenological model of viscosity developed by Kim and Chair has demonstrated very good agreement for normal liquid, helium or monoatomic metals. In this paper, we propose to use it in the case of semiconductor melts.
PACS: 61.25.Mv – Liquid metals and alloys
© EDP Sciences, 2004
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