Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|Page(s)||455 - 459|
|Section||Defects in SC lasers and other devices|
|Published online||15 July 2004|
Imaging of spontaneous emission from 980 nm tapered lasers with windowed N-contacts
School of Electrical and Electronic Engineering, University of Nottingham,
Nottingham, NG7 2RD, UK
2 A.F. Ioffe Physical Technical Institute, 26 Politehnicheskaya, St. Petersburg, 194021, Russia
3 Departamento de Tecnología Fotónica, Universidad Politécnica de Madrid, 28040 Madrid, Spain
4 THALES Research & Technology, Domaine de Corbeville, 91404 Orsay Cedex, France
Corresponding author: email@example.com
Accepted: 18 December 2003
Published online: 15 July 2004
Experimental measurements of the spatial distribution of the spontaneous emission produced inside the cavity of a 4° 980 nm tapered laser are presented and compared with the results of a 2.5 D half-space, hot-cavity simulation. A custom device with a windowed n-contact was designed and fabricated for this work. The effectiveness of this windowed contact was investigated and appears to be satisfactory. The measurement system for photo- and electroluminescence microscopy imaging was quantitatively calibrated with an error of < ±15%. Good agreement between the experimental and simulated results are presented, with an error of ~ 6% in the carrier density at the output facet.
PACS: 42.55.Px – Semiconductor lasers; laser diodes / 78.60.Fi – Electroluminescence
© EDP Sciences, 2004
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