Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|Page(s)||43 - 48|
|Published online||15 July 2004|
Non-destructive optical methods for assessing defects in production of Si or SiGe materials
Accent Optical Technologies UK Ltd, Hemel Hempstead, HP2 7DF, UK
2 ST Microelectronics, 850 rue Jean Monnet, 38926 Crolles, France
Corresponding author: email@example.com
Accepted: 10 February 2004
Published online: 15 July 2004
Non-destructive techniques are ideal for process control and process development. They do not involve any special wafer treatment and the wafers can be further processed in the manufacturing line. A relatively new technique that can be applied to materials characterizations is room temperature photoluminescence (RT-PL). Defects can be revealed because of the enhanced non-radiative recombination at the defect site. The efficiency of detecting defects in SiGe was evaluated. Defects could be detected in blanket film SiGe layers, and there was a good correlation with bright field microscopy inspection and laser scanning methods. The effect of ex-situ cleaning, pre-bake and Boron doping conditions have been investigated. The results follow the expected trends, more defects for non-standard processing. The defects detected by RT-PL were confirmed using transmission electron microscopy (TEM). Defects could also be detected in part-processed patterned wafers, giving a direct indication of the material quality in product wafers.
PACS: 61.72.Ff – Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.) / 61.72.Hh – Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.) / 78.55.Ap – Elemental semiconductors
© EDP Sciences, 2004
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