Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|Page(s)||49 - 54|
|Published online||15 July 2004|
Strain mapping in deep sub-micron Si devices by convergent beam electron diffraction in the STEM
CNR-IMM Sezione di Bologna, Via P. Gobetti 101, 40129 Bologna, Italy
2 INFM-National Research Centre-S3 and Dipartimento di Fisica, Universitá di Modena e Reggio Emilia, Via G. Campi 213/A, 41100 Modena, Italy
Corresponding author: email@example.com
Accepted: 9 December 2003
Published online: 15 July 2004
The principles of the convergent beam electron diffraction technique, which is a point-to-point method for local strain analysis of thin crystals in the transmission electron microscope, are briefly outlined. The availability in modern instruments of scanning attachments coupled with high-angle annular dark-field detectors (STEM/HAADF) has recently enabled the automatic acquisition of diffraction patterns in a large number of points, selected by digitally rastering the probe in a two dimensional region of the sample. As the components of the strain tensor can be calculated at each point, 2D strain mapping has thus become possible. An example of application of the technique to deep sub-micron shallow-trench isolation structures in silicon is reported.
PACS: 61.14.Lj – Convergent-beam electron diffraction, selected-area electron diffraction, nanodiffraction / 85.30.De – Semiconductor-device characterization, design, and modeling / 46.80.+j – Measurement methods and techniques in continuum mechanics of solids
© EDP Sciences, 2004
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