Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|Page(s)||37 - 41|
|Published online||15 July 2004|
Defects in wide band-gap semiconductors: selective etching and calibration by complementary methods
Experimental Solid State Physics III, University of Nijmegen,
Toernooiveld 1, 6525 ED Nijmegen, The Netherlands
2 High Pressure Research Center, Polish Academy of Sciences, ul. Sokolowska 29/37, 01-142 Warsaw, Poland
Corresponding author: email@example.com
Accepted: 28 January 2004
Published online: 15 July 2004
Two approaches to defect-selective etching used for revealing and analysis of defects in GaN and SiC are described and critically evaluated. These are: (i) orthodox etching which results in formation of pits on the defect sites and (ii) electroless etching, which yields protruding etch features. The mechanisms of surface reactions that are responsible for the distinct differences in the morphology of defect-related etch features are discussed. The most frequently used etching systems for GaN and SiC and the methods of verification of their reliability in revealing different types of defects are described.
PACS: 61.72.Ff – Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.) / 68.37.-d – Microscopy of surfaces, interfaces, and thin films / 82.50.Hp – Processes caused by visible and UV light
© EDP Sciences, 2004
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