| Issue |
Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004
Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|
|
|---|---|---|
| Page(s) | 189 - 192 | |
| Section | Electrical properties | |
| DOI | https://doi.org/10.1051/epjap:2004106 | |
| Published online | 15 July 2004 | |
https://doi.org/10.1051/epjap:2004106
Effect of crystal defects on the electrical behaviour of InP and SiGe epitaxial structures
1
Hungarian Academy of Sciences, Research Institute for Technical
Physics and Materials Science, Budapest 114, PO Box 49, H-1525,
Hungary
2
Institute for Physics of Microstructures, Russian Academy
of Sciences, 603600 Nizhny Novgorod, GSP-105, Russia
Corresponding author: horvzsj@mfa.kfki.hu
Received:
4
July
2003
Accepted:
28
January
2004
Published online: 15 July 2004
The defects in InP epitaxial structures (containing in part Pt nanoparticles) and SiGe/Si heterostructures, and their electrical behaviour are studied. In InP structures pinholes, in SiGe/Si structures misfit dislocations were observed in the epitaxial layers. These defects yielded different anomalies of the electrical behaviour, as excess and leakage currents, instabilities, anomalous temperature dependence and anomalous apparent barrier height. It is shown that inspite of anomalies, the electrical measurements provide useful and reliable information about the structures.
PACS: 73.30.+y – Surface double layers, Schottky barriers, and work functions / 73.40.Gk – Tunneling / 73.20.Hb – Impurity and defect levels; energy states of adsorbed species
© EDP Sciences, 2004
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