Eur. Phys. J. Appl. Phys.
Volume 54, Number 1, April 2011
|Number of page(s)||5|
|Section||Semiconductors and Devices|
|Published online||13 April 2011|
In-plane strain states of standard and flip-chip GaN epilayers
State Key Laboratory of Crystal Materials, Shandong University, 27 South
Shanda Road, Jinan, Shandong, 250100, P.R. China
Corresponding author: email@example.com
Accepted: 11 January 2011
Published online: 13 April 2011
We report here a comparative study of the in-plane strain states of standard GaN epilayer grown on sapphire (001) and flip-chip GaN epilayer bonded on Si (111) wafer by means of X-Ray diffraction (XRD), Raman spectroscopy, and photoluminescence (PL) spectroscopy. It is confirmed that the in-plane tensile strains can be largely reduced after the flip-chip process. The reduction of the biaxial strains determined by XRD, Raman, and PL analysis is found to be consistent.
© EDP Sciences, 2011
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