| Issue |
Eur. Phys. J. Appl. Phys.
Volume 54, Number 1, April 2011
|
|
|---|---|---|
| Article Number | 10101 | |
| Number of page(s) | 5 | |
| Section | Semiconductors and Devices | |
| DOI | https://doi.org/10.1051/epjap/2011100454 | |
| Published online | 13 April 2011 | |
https://doi.org/10.1051/epjap/2011100454
In-plane strain states of standard and flip-chip GaN epilayers
State Key Laboratory of Crystal Materials, Shandong University, 27 South
Shanda Road, Jinan, Shandong, 250100, P.R. China
Corresponding author: liuduo@sdu.edu.cn
Received:
11
November
2010
Accepted:
11
January
2011
Published online:
13
April
2011
We report here a comparative study of the in-plane strain states of standard GaN epilayer grown on sapphire (001) and flip-chip GaN epilayer bonded on Si (111) wafer by means of X-Ray diffraction (XRD), Raman spectroscopy, and photoluminescence (PL) spectroscopy. It is confirmed that the in-plane tensile strains can be largely reduced after the flip-chip process. The reduction of the biaxial strains determined by XRD, Raman, and PL analysis is found to be consistent.
© EDP Sciences, 2011
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