| Issue |
Eur. Phys. J. AP
Volume 19, Number 3, September 2002
|
|
|---|---|---|
| Page(s) | 195 - 199 | |
| Section | Magnetism, Superconductivity and Related Devices | |
| DOI | https://doi.org/10.1051/epjap:2002066 | |
| Published online | 12 September 2002 | |
https://doi.org/10.1051/epjap:2002066
Effect of leakage current induced by B+H+ implantation in the isolation process for self passivated GaAlAs/GaInP/ GaAs HBT
1
Faculté des Sciences de Bizerte, 7021 Zarzouna-Bizerte, Tunisia
2
Laboratoire de Physique de la Matière Condensée, Faculté des Sciences de Tunis, Campus
Universitaire, 1060 Tunis, Tunisia
3
OPTO, Groupement d'intérêt économique, route de
Nozay, 91461 Marcoussis Cedex, France
Corresponding author: Ramzi.Bourguiga@fsb.rnu.tn
Received:
19
June
2001
Revised:
3
December
2001
Accepted:
18
February
2002
Published online:
12
September
2002
The excess leakage current due to the ion implantation isolation process used in the fabrication of double mesa Self Passivated GaAlAs/GaInP/GaAs Heterojunction Bipolar Transistors (SP-HBT) has been investigated. This ion implantation process, used to limit the active emitter length results in a drastic reduction of the current gain. The ideality factor of the recombination current associated with the ion implantation has been found to be 1.8, close to the conventional value of 2.
PACS: 85.30.-z – Semiconductor devices / 73.40.-c – Electronic transport in interface structures
© EDP Sciences, 2002
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