Eur. Phys. J. AP
Volume 6, Number 3, June 1999
|Page(s)||299 - 301|
|Published online||15 June 1999|
Surface passivation of composition graded base in GaAlAs/GaInP/GaAs heterojunction bipolar transistor
Faculté des Sciences de Bizerte,
7021 Zarzouna-Bizerte, Tunisia
2 France Télécom, Centre National d'Études des Télécommunications, Paris B, Laboratoire de Bagneux, 196 avenue Henri Ravera, B.P. 107, 92225 Bagneux Cedex, France
Revised: 13 January 1999
Accepted: 19 February 1999
Published online: 15 June 1999
A comparative study on the emitter-base recombination current in different GaAlAs/GaInP/GaAs HBT structures including uniform base HBTs, and composition graded base HBTs, has been carried out. We have demonstrated that a graded base is not sufficient to prevent recombination on the base surface and that a thin GaInP ledge on the base surface reMayns necessary to retain a high enough current gain for small emitter high-frequency devices.
PACS: 85.30.-z – Semiconductor devices / 73.40.-c – Electronic transport in interface structures
© EDP Sciences, 1999
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