| Issue |
Eur. Phys. J. AP
Volume 6, Number 3, June 1999
|
|
|---|---|---|
| Page(s) | 299 - 301 | |
| DOI | https://doi.org/10.1051/epjap:1999187 | |
| Published online | 15 June 1999 | |
https://doi.org/10.1051/epjap:1999187
Surface passivation of composition graded base in GaAlAs/GaInP/GaAs heterojunction bipolar transistor
1
Faculté des Sciences de Bizerte,
7021 Zarzouna-Bizerte, Tunisia
2
France Télécom, Centre National d'Études
des Télécommunications, Paris B, Laboratoire
de Bagneux,
196 avenue Henri Ravera, B.P. 107,
92225 Bagneux Cedex, France
Received:
28
October
1998
Revised:
13
January
1999
Accepted:
19
February
1999
Published online: 15 June 1999
A comparative study on the emitter-base recombination current in different GaAlAs/GaInP/GaAs HBT structures including uniform base HBTs, and composition graded base HBTs, has been carried out. We have demonstrated that a graded base is not sufficient to prevent recombination on the base surface and that a thin GaInP ledge on the base surface reMayns necessary to retain a high enough current gain for small emitter high-frequency devices.
PACS: 85.30.-z – Semiconductor devices / 73.40.-c – Electronic transport in interface structures
© EDP Sciences, 1999
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