| Issue |
Eur. Phys. J. AP
Volume 4, Number 1, October 1998
|
|
|---|---|---|
| Page(s) | 27 - 29 | |
| DOI | https://doi.org/10.1051/epjap:1998104 | |
| Published online | 15 October 1998 | |
https://doi.org/10.1051/epjap:1998104
Investigation on base surface recombination in Self Passivated GaAlAs/GaInP/GaAs Heterojunction Bipolar Transistor
1
Faculté des Sciences de Bizerte, 7021 Zarzouna-Bizerte, Tunisia
2
France Telecom, Centre National d'Études des Télécommunications,
Paris B Laboratoire de Bagneux,
196 avenue Henri Ravera, BP 107, 92225 Bagneux Cedex, France
Received:
6
October
1997
Revised:
12
February
1998
Accepted:
9
June
1998
Published online: 15 October 1998
The dependence of the current gain with the size of the emitter-base junction of double mesa Self Passivated Heterojunction Bipolar Transistors (SP-HBT) has been investigated, the extrinsic base layer being passivated with a n-type GaInP layer. The current gain is widely improved, due to a 18-fold reduction of the surface recombination in the extrinsic base region with respect to unpassivated HBT. The surface recombination current ideality factor has been found to be 1.13.
PACS: 85.30.-z – Semiconductor devices / 73.40.-c – Electronic structure and electrical properties of surface, interfaces and thin films
© EDP Sciences, 1998
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