Eur. Phys. J. AP
Volume 4, Number 1, October 1998
|Page(s)||27 - 29|
|Published online||15 October 1998|
Investigation on base surface recombination in Self Passivated GaAlAs/GaInP/GaAs Heterojunction Bipolar Transistor
Faculté des Sciences de Bizerte, 7021 Zarzouna-Bizerte, Tunisia
2 France Telecom, Centre National d'Études des Télécommunications, Paris B Laboratoire de Bagneux, 196 avenue Henri Ravera, BP 107, 92225 Bagneux Cedex, France
Revised: 12 February 1998
Accepted: 9 June 1998
Published online: 15 October 1998
The dependence of the current gain with the size of the emitter-base junction of double mesa Self Passivated Heterojunction Bipolar Transistors (SP-HBT) has been investigated, the extrinsic base layer being passivated with a n-type GaInP layer. The current gain is widely improved, due to a 18-fold reduction of the surface recombination in the extrinsic base region with respect to unpassivated HBT. The surface recombination current ideality factor has been found to be 1.13.
PACS: 85.30.-z – Semiconductor devices / 73.40.-c – Electronic structure and electrical properties of surface, interfaces and thin films
© EDP Sciences, 1998
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.