Extraction of the InP/InGaAs metallic collector-up heterojunction bipolar transistor small-signal equivalent circuit

¹ Laboratoire de Physique des Matériaux, Propriétés et Analyses, Groupe Physique des Composants et Dispositifs Nanométriques, Faculté des Sciences de Bizerte, 7021 Jarzouna-Bizerte, Tunisia
² Laboratoire de Photonique et Nanostructures - CNRS, Route de Nozay, 91190 Marcoussis, France

Corresponding author: bourguigar@yahoo.fr

Received: 5 July 2007
Revised: 22 November 2007
Accepted: 16 January 2008
Published online: 30 April 2008

Abstract

An efficient technique for determining the small-signal equivalent-circuit model of a Metal collector-up Heterojunction Bipolar Transistor (C-up MHBT) is presented. The technique employs analytically derived expressions for direct calculation of HBT T-Model equivalent circuit element values in terms of the measured S-parameters. This approach avoids errors due to uncertainty in fitting to large, over determined equivalent circuits and does not require the use of test structures and extra measurement steps to evaluate parasitics. Physically realistic results are demonstrated under various biasing conditions for the n-p-n InP/InGaAs HBT with metallic collector up structure. The agreement between the measured and model-produced data is excellent over the large frequency range and for several polarizations conditions for devices.