Eur. Phys. J. AP
Volume 11, Number 3, September 2000
|Page(s)||189 - 195|
|Published online||15 September 2000|
Two photon absorption in semi-insulating gallium arsenide photoconductive switch irradiated by a picosecond infrared laser
Société Alliage, 75005 Paris, France
2 Thomson Shorts systèmes SA, 92223 Bagneux, France
3 LGE, Université de Pau, 64000 Pau, France
Corresponding author: firstname.lastname@example.org
Revised: 1 January 2000
Accepted: 10 July 2000
Published online: 15 September 2000
We study gallium arsenide (GaAs) high voltage photoconductive switches triggered by a 30 ps neodymium: yttrium aluminium garnet (Nd:YAG) laser, i.e. using photons of energy smaller than the band gap. We measure optical absorption at Brewster incidence under optical pulse excitation and determine the extrinsic one photon and intrinsic two photon absorption coefficients. Analyzing the photoconductive resistance under different power densities of laser radiation, and using the absorption data, we demonstrate that only about 20% of the photons absorbed by the extrinsic process are converted into free electrons. We conclude that high efficiencies can only be obtained by using two photon absorption, which is feasible with ultrafast lasers and focussed beams.
PACS: 72.40.+w – Photoconduction and photovoltaic effects / 61.82.Fk – Semiconductors / 82.40.Mw – Pulse techniques
© EDP Sciences, 2000
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