| Issue |
Eur. Phys. J. Appl. Phys.
Volume 35, Number 1, July 2006
|
|
|---|---|---|
| Page(s) | 1 - 5 | |
| Section | Semiconductors and Related Materials | |
| DOI | https://doi.org/10.1051/epjap:2006068 | |
| Published online | 23 June 2006 | |
https://doi.org/10.1051/epjap:2006068
Intersubband optical absorption in double quantum well under intense laser field
1
Department of Physics, Cumhuriyet University, 58140 Sivas, Turkey
2
Department of Physics, Dokuz Eylül University, Izmir, Turkey
Corresponding author: eozturk@cumhuriyet.edu.tr
Received:
15
December
2005
Revised:
20
March
2006
Accepted:
3
May
2006
Published online:
23
June
2006
The intersubband absorption in symmetric double quantum wells under the laser field is theoretically calculated within the framework of the effective mass approximation. Results obtained show that intersubbband optical transition and energy levels in double quantum well can significantly be modified and controlled by intense laser field. This statement gives a new degree of freedom in various device applications based on the intersubband transition of electrons.
PACS: 71.55.Eq – III-V semiconductors / 73.21.Fg – Quantum wells / 78.67.De – Quantum wells
© EDP Sciences, 2006
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