| Issue |
Eur. Phys. J. Appl. Phys.
Volume 46, Number 2, May 2009
|
|
|---|---|---|
| Article Number | 20303 | |
| Number of page(s) | 4 | |
| Section | Semiconductors and Devices | |
| DOI | https://doi.org/10.1051/epjap/2009047 | |
| Published online | 27 March 2009 | |
https://doi.org/10.1051/epjap/2009047
Electrical properties of Se–Zn–In chalcogenide glasses
Department of physics, Banaras Hindu University, 221005 Varanasi, India
Corresponding author: kedar_abhay@rediffmail.com
Received:
5
September
2008
Revised:
20
January
2009
Accepted:
9
February
2009
Published online:
27
March
2009
Electrical measurements of Se
Zn2InX (X = 0, 2, 4, 6 and 10) chalcogenide glasses have been carried out at room temperature. I-V characteristic of the present glasses were recorded upto 200 V. A drastic changes in I-V characteristic have been observed between 180 to 200 V for 4, 6, 10 at% of indium. The composition dependence of electrical conductivity is also discussed.
PACS: 63.50.Lm – Glasses and amorphous solids / 72.15.Cz – Electrical and thermal conduction in amorphous and liquid metals and alloys / 61.43.Dq – Amorphous semiconductors, metals, and alloys
© EDP Sciences, 2009
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.