Measure and analysis of 4H-SiC Schottky barrier height with Mo contacts | The European Physical Journal Applied Physics (EPJ AP)

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Table 3

Identification of defects based on the published results, marked by the temperature of the DLTS peak obtained with a window of 204.8 ms. The range of activation energies indicated is extracted from the Tables 1 and 2.

		Identification	Reference
34–43	0.075–0.087	N	[14–16]
83–84	0.152–0.154	–	–
112–115	0.229–0.245	Metal impurity	[17]
265–295	0.517–0.626	Z ₁/Z ₂	[18–21]
390–393	0.813–0.839	NB center	[22]
505–510	0.863–0.944	RD_1/2	[18,20,23]

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