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Table 2
Characteristics (activation energy E C − E T , capture cross section σ and concentration N T ) obtained by Arrhenius plot of defects detected by C-DLTS (200–550 K). The defects are marked by the peak position of the DLTS signal shown in Figure 6.
| T (K) |
|
|
NT (cm−3) |
|---|---|---|---|
| Diode (a) | |||
| 280 | 0.574 |
 |
 |
| 0.626 |
 |
 |
|
| 380 | 0.839 |
 |
 |
| 510 | 0.863 |
 |
 |
| 0.914 |
 |
 |
|
| Diode (b) | |||
| 265 | 0.517 |
 |
 |
| 295 | 0.583 |
 |
 |
| 383 | 0.813 |
 |
 |
| 505 | 0.946 |
 |
 |
| 0.944 |
 |
 |
|
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