| Issue |
Eur. Phys. J. Appl. Phys.
Volume 98, 2023
|
|
|---|---|---|
| Article Number | 36 | |
| Number of page(s) | 3 | |
| Section | Semiconductors and Devices | |
| DOI | https://doi.org/10.1051/epjap/2023230001 | |
| Published online | 24 May 2023 | |
https://doi.org/10.1051/epjap/2023230001
Regular Article
Investigation of the relationship between porosity and luminescent properties of porous silicon
1
Voronezh State University, 394018 Voronezh, Russia
2
Voronezh State University of Engineering Technologies, 394036 Voronezh, Russia
* e-mail: tangar77@mail.ru
Received:
2
January
2023
Received in final form:
26
February
2023
Accepted:
28
February
2023
Published online: 24 May 2023
In this work, we obtained porous silicon with different porosity by electrochemical etching and studied their photoluminescence. Two well-known photoluminescence mechanisms of porous silicon related to the composition and morphology of the surface have been discovered, and it has been established at what porosity values they prevail. It is shown that an increase in the porosity index leads to an increase in the intensity of photoluminescence.
© EDP Sciences, 2023
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.