Eur. Phys. J. Appl. Phys.
Volume 49, Number 2, February 2010
|Number of page(s)||24|
|Published online||26 January 2010|
X-ray metrology for advanced microelectronics
CEA-LETI, Minatec, 17 rue des Martyrs, 38054 Grenoble, France
Corresponding author: firstname.lastname@example.org
Accepted: 25 November 2009
Published online: 26 January 2010
The recent development of bright X-ray sources, reliable X-ray focusing optics, large X-ray detectors and X-ray data modelling and processing, have improved X-ray techniques to the point where many are being introduced in MOS transistor manufacturing lines as new metrology methods. The fundamental X-ray physical properties, such as their small wavelength and their weak interaction with solid-state matter satisfy basic in-line metrology requirements: non-destructiveness, speed, accuracy, reliability and long-term stability. The capability of X-ray based metrology methods to monitor critical 65 and 45 nm processes such as ion implant, nitrided SiO2 gate dielectrics, NiSi, Cu/porous low-κ interconnects and MIM capacitors is highlighted in this paper.
© EDP Sciences, 2009
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