Eur. Phys. J. Appl. Phys.
Volume 98, 2023
|Number of page(s)||12|
|Section||Semiconductors and Devices|
|Published online||19 September 2023|
Crossover from direct to trap assisted Fowler Nordheim (FN) tunneling in CoFeB/MgO/CoFeB magnetic tunnel junctions
Department of Electronic Engineering, Gachon University, Seongnam-si, Gyeonggi-do 13120, Republic of Korea
2 Gachon Advanced Institute of Semiconductor Technology, Gachon University, Seongnam-Si, Gyeonggi-Do 13120, Republic of Korea
3 Department of Physics, Dr. Vishwanath Karad MIT World Peace University, Pune, Maharashtra 411038, India
* e-mail: firstname.lastname@example.org
Received in final form: 27 June 2023
Accepted: 2 August 2023
Published online: 19 September 2023
Electron conduction mechanisms in CoFeB (0.8–10 nm)/MgO (3 nm)/CoFeB (4.2 nm) magnetic tunnel junctions (MTJs) have been investigated in detail. A clear crossover from direct tunnelling to trap assisted Fowler Nordheim (FN) tunneling is observed with increasing bias voltage in all the pristine MTJs. In contrast, FN-like tunneling is completely suppressed in vacuum annealed MTJs, which plausibly indicates diffused interfaces and enhanced trap state density in the MgO barrier. In annealed MTJs, beyond the direct tunneling regime, bulk-limited Pool Frenkel emission followed by interface-limited Schottky emission are found to be the dominant transport mechanisms. Simulations of tunnel current density J(V) and differential conductance (dJ/dV) of MTJs have been carried out using Simmons (symmetric rectangular barrier) and Brinkman (asymmetric trapezoidal barrier) model, which provides valuable insights into the barrier height and interface property at the MgO/CoFeB interface. Results of this study might be helpful to further improve CoFeB/MgO based MTJs for efficient implementation in sensors and memory devices.
© EDP Sciences, 2023
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