Issue |
Eur. Phys. J. Appl. Phys.
Volume 96, Number 3, December 2021
|
|
---|---|---|
Article Number | 30301 | |
Number of page(s) | 9 | |
Section | Thin Films | |
DOI | https://doi.org/10.1051/epjap/2021210195 | |
Published online | 14 December 2021 |
https://doi.org/10.1051/epjap/2021210195
Regular Article
Nanostructured LaFeO3/Si thin films grown by pulsed laser deposition
1
Université de Toulon, AMU, CNRS, IM2NP, CS 60584, Toulon 83041, France
2
Faculty of Metals Engineering and Industrial Computer Science, AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Cracow, Poland
* e-mail: christian.turquat@univ-tln.fr
Received:
28
August
2021
Received in final form:
12
November
2021
Accepted:
22
November
2021
Published online: 14 December 2021
The orthorhombic LaFeO3 thin films grown by pulsed laser deposition on silicon showed nano-structuration of their surface and preferential crystallographic exposed facets, depending on the deposition temperature. The LaFeO3 film deposited at 850 °C has two types of grain termination, flat or tip-like, corresponding to two different growth directions, respectively [110] and [200]. However, due to the shape of the termination, the two types of grains expose the same {110} facets. The prepared lanthanum iron oxide films are iron deficient and consequently contains oxygen vacancies, the exact chemical formula being LaFe0.82O3-δ.
© Jędrusik et al., Published by EDP Sciences, 2021
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