Eur. Phys. J. Appl. Phys.
Volume 25, Number 1, January 2004
|Page(s)||25 - 31|
|Section||Surfaces, Interfaces and Films|
|Published online||02 December 2003|
Evidence of strain induced structural change in hetero-epitaxial NdNiO3 thin films with metal-insulator transition
Laboratoire de Physique de l'État Condensé, UMR CNRS 6087, Université du Maine, avenue O. Messiaen, 72085 Le Mans Cedex, France
2 EMAT, University of Antwerp, Groeonenborgerlaan 171, 2020 Antwerp, Belgium
3 Laboratoire de Physico-Chimie des Interfaces et Applications, Université d'Artois, rue Jean Souvraz, SP 18, 62307 Lens Cedex, France
4 Exp. Cond. Matter Physics Division, Saha Institute of Nuclear Physics 1/AF Bidhan Nagar, Calcutta 700064, India
Corresponding author: email@example.com
Revised: 14 October 2003
Accepted: 17 October 2003
Published online: 2 December 2003
Neodymium nickelate thin films have been prepared on NdGaO3 substrates by RF magnetron sputtering and post-annealing treatment under oxygen pressure. Transport properties are found to depend strongly on film thickness. Thick films show transport properties close to bulk ceramics, while very thin films exhibit a large transition from metal to insulator which occurs over a wide temperature range with high resistivity. Structure and surface morphology of the films have been investigated by Transmission Electron Microscopy (TEM) and Atomic Force Microscopy (AFM). Thin films (≈17 nm) grow heteroepitaxially, while thicker films (≈73 nm) show a granular structure. The thinnest sample suggests a symmetry change induced by the epitaxial strain of the substrate. This paper discusses the relationship between microstructure and transport properties.
PACS: 73.50.-h – Electronic transport phenomena in thin films / 71.30.+h – Metal-insulator transitions and other electronic transitions / 73.61.-r – Electrical properties of specific thin films
© EDP Sciences, 2004
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