| Issue |
Eur. Phys. J. Appl. Phys.
Volume 64, Number 1, October 2013
|
|
|---|---|---|
| Article Number | 10301 | |
| Number of page(s) | 8 | |
| Section | Thin Films | |
| DOI | https://doi.org/10.1051/epjap/2013120530 | |
| Published online | 03 October 2013 | |
https://doi.org/10.1051/epjap/2013120530
Optical properties and thermal stability of alumina films grown by pulsed laser deposition
Department of Physics, Guru Nanak Dev University, Amritsar, Punjab 143005, India
a e-mail: akphysics@yahoo.com
Received:
4
December
2012
Revised:
5
April
2013
Accepted:
1
August
2013
Published online:
3
October
2013
Thin films of aluminum oxide of thickness 293–433 nm were grown on fused silica substrates by pulsed laser deposition (PLD) of an alumina target with KrF excimer laser radiation. The effects of oxygen background pressure (0.5–50 Pa) and substrate temperature of room temperature to 800 °C were investigated on thickness, crystal-structure, optical properties and thermal stability of alumina films. It was found that PLD grows a weakly crystalline aluminum oxide film at in situ substrate temperature of 800 °C and oxygen background pressure of 5 Pa. Post-deposition annealing studies of amorphous alumina sample prepared at in situ temperature of 600 °C found that crystallization starts at 800 °C and forms δ alumina phase.
© EDP Sciences, 2013
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