Regular Article

Investigation on the luminescent stability in amorphous silicon oxynitride systems^★

¹ Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P.R. China
² College of Electronic and Information Engineering, Jinling Institute of Technology, Nanjing 211169, P.R. China

^* e-mail: pzzhang@jit.edu.cn

Received: 1 September 2019
Received in final form: 28 January 2020
Accepted: 17 February 2020
Published online: 9 April 2020

Abstract

Light induced degradation is a common phenomenon in the photoluminescence (PL) properties of silicon (Si) based light emitting materials. Based on our previous research of highly efficient luminescent amorphous silicon oxynitride (a-SiN_xO_y) systems, in this work, we intensively investigated the light induced degradation properties of a-SiN_xO_y, and then further significantly improved the related PL stability. It was notable that the a-SiN_xO_y films exhibit a light induced time evolutionary metastable PL and have self-recovery properties when exposed in the air after a period. With the purpose of eliminating the light induced degradation and the meta-stable PL in a-SiN_xO_y films, we employed thermal annealing combined with pulsed laser annealing processes, which makes the film density improved and weak bond angle eliminated, thus obtaining the high stable luminescent a-SiN_xO_y films in visible range.