Eur. Phys. J. Appl. Phys.
Volume 89, Number 1, January 2020
Disordered Semiconductors: Physics and Applications
|Number of page(s)||5|
|Published online||09 April 2020|
Investigation on the luminescent stability in amorphous silicon oxynitride systems★
Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P.R. China
2 College of Electronic and Information Engineering, Jinling Institute of Technology, Nanjing 211169, P.R. China
* e-mail: firstname.lastname@example.org
Received in final form: 28 January 2020
Accepted: 17 February 2020
Published online: 9 April 2020
Light induced degradation is a common phenomenon in the photoluminescence (PL) properties of silicon (Si) based light emitting materials. Based on our previous research of highly efficient luminescent amorphous silicon oxynitride (a-SiNxOy) systems, in this work, we intensively investigated the light induced degradation properties of a-SiNxOy, and then further significantly improved the related PL stability. It was notable that the a-SiNxOy films exhibit a light induced time evolutionary metastable PL and have self-recovery properties when exposed in the air after a period. With the purpose of eliminating the light induced degradation and the meta-stable PL in a-SiNxOy films, we employed thermal annealing combined with pulsed laser annealing processes, which makes the film density improved and weak bond angle eliminated, thus obtaining the high stable luminescent a-SiNxOy films in visible range.
© EDP Sciences, 2020
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