Issue |
Eur. Phys. J. Appl. Phys.
Volume 32, Number 2, November 2005
|
|
---|---|---|
Page(s) | 105 - 108 | |
Section | Surfaces, Interfaces and Films | |
DOI | https://doi.org/10.1051/epjap:2005076 | |
Published online | 26 October 2005 |
https://doi.org/10.1051/epjap:2005076
The UV-induced positive and negative refractive index changes in GeO2-SiO2 films
1
National Integrated Optoelectronics Laboratory, Jilin University,
Changchun, 130012, P.R. China
2
Department of Physics, Jilin University, Changchun, 130023, P.R. China
3
Editorial Department of Journal of Jilin University (Science Edition), Jilin University, Changchun, 130023, P.R. China
Corresponding author: zlt@jlu.edu.cn
Received:
4
February
2005
Revised:
14
May
2005
Accepted:
25
May
2005
Published online:
26
October
2005
xGeO2-(1-x)SiO2 films ()
were deposited by flame hydrolysis deposition (FHD) on Si substrates and
annealed to 1150 °C for 2 h for consolidation in air. Then the films were
irradiated perpendicularly to KrF excimer laser after being hydrogen loaded
to enhance the photosensitivity to UV light. X-ray photoelectron
spectroscopy (XPS) was used in order to characterize the purity of the
films. The film was also studied using atomic force microscopy (AFM) to
determine the analytical details of the microstructure. Film thickness and
refractive index were measured by variable angle spectroscopic ellipsometry
(VASE). The maximum positive 0.339% and negative 0.235% refractive
index changes at 1550 nm were obtained after irradiation.
PACS: 42.62.-b – Laser applications / 42.70.Ce – Glasses, quartz / 78.20.Ci – Optical constants
© EDP Sciences, 2005
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