Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|Page(s)||289 - 291|
|Published online||15 July 2004|
Scanning room temperature photoluminescence in SiNx:H layers
University of South Florida, 4202 E Fowler Avenue, Tampa, Florida, 33620,
2 Georgia Institute of Technology, 777 Atlanta Dr., Atlanta, GA 30332, USA
3 Evergreen Solar, 259 Cedar Hill St., Marlboro, MA 01752, USA
Corresponding author: email@example.com
Accepted: 18 December 2003
Published online: 15 July 2004
We report on spectroscopic photoluminescence (PL) mapping of solar-cell-grade mc-Si ribbon wafers. We observe under UV excitation a broad visible emission from the SiNx:H layer. The samples covered with SiNx:H were subjected to rapid thermal processing at different temperatures, and PL maps were measured before and after treatment. We observed that after RTP treatment the intensity of the PL band was significantly increased, which indicates further reduction of non-radiative defects. The magnitude of these increases depends on the RTP conditions. The visible PL band exhibits a reversible photo quenching of the intensity under 325 nm HeCd laser excitation. The PL intensity can be recovered by annealing with the rate exhibiting a thermally activated behavior. The observed PL photo quenching reveals a metastable process in the SiNx:H film under UV excitation. We demonstrate the possibility of creating a reversible luminescence micro-pattern on the SiNx:H layer using a focused UV laser beam.
PACS: 78.55.Qr – Amorphous materials; glasses and other disordered solids / 73.61.Jc – Amorphous semiconductors; glasses
© EDP Sciences, 2004
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