Eur. Phys. J. Appl. Phys.
Volume 72, Number 1, October 2015
|Number of page(s)||6|
|Section||Semiconductors and Devices|
|Published online||30 September 2015|
Study of the characteristics current-voltage and capacitance-voltage in nitride GaAs Schottky diode
Laboratoire de Micro-électronique Appliquée, Université Djillali Liabès de Sidi Bel Abbés, BP 89, 22000
Sidi Bel Abbés, Algeria
2 Laboratoire des Sciences des Matériaux pour l’Electronique et d’Automatique, Université Blaise Pascal de Clermont II, Les Cézeaux, 63177 Aubière, France
a e-mail: firstname.lastname@example.org
Revised: 20 May 2015
Accepted: 27 August 2015
Published online: 30 September 2015
This article reports the study of Au/GaN/GaAs Schottky diodes, where the thin GaN film is prepared by nitridation of GaAs substrates with thicknesses of 0.7 and 0.8 nm. The resulting GaN sample with thickness 0.8 nm is then treated with an annealing operation (heating to 620 °C) to improve the current transport. The current-voltage (I-V) and capacitance-voltage (C-V) of the Au/GaN/GaAs structures were investigated at room temperature. In fact, the I-V characteristics show that the annealed sample has low series resistance (Rs) and ideality factor (n) (63 Ω, 2.27 respectively) when compared to the values obtained in the untreated sample (1.83 kΩ, 3.31 respectively). The formation of the GaN layer on the gallium arsenide surface is investigated through calculation of the interface state density NSS with and without the presence of series resistance Rs. The value of the interface state density NSS(E) close to the mid-gap was estimated to be in the order of 4.7×1012 cm-2 eV-1 and 1.02× 1013 cm-2 eV-1 with and without the annealing operation, respectively. However, nitridation with the annealing operation at 620 °C improves the electrical properties of the resultant Schottky diode.
© EDP Sciences, 2015
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