Eur. Phys. J. Appl. Phys.
Volume 60, Number 1, October 2012
|Number of page(s)||5|
|Section||Semiconductors and Devices|
|Published online||31 October 2012|
DC and RF characteristics of bilayer Schottky metal contact on n-GaN Schottky diode
School of Physics, Universiti Sains Malaysia, 11800 Minden, Penang, Malaysia
2 School of Electrical and Electronics Engineering, Universiti Sains Malaysia, 11800 Minden, Penang, Malaysia
a e-mail: email@example.com
Accepted: 25 September 2012
Published online: 31 October 2012
In device technology, the multilayer contacts provide improved performance. The comparative study of different high work function bilayer Schottky metal (Pt/Pd, Pt/Ni and Pt/Ti) contact has been taken to study the DC and RF performance of n-GaN Schottky diode. The fabricated Schottky metal contact Pt/Pd, Pt/Ni and Pt/Ti annealed from room temperature to 800 °C studied shows that Pt/Pd Schottky metal contact on n-GaN shows high thermal stability and maximum barrier height 1.10 eV, ideality factor 1.001, lower series resistance and lower insertion loss (S21 dB) at high frequency compared to Pt/Ni and Pt/Ti bilayer Schottky metal contact.
© EDP Sciences, 2012
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