| Issue |
Eur. Phys. J. Appl. Phys.
Volume 60, Number 1, October 2012
|
|
|---|---|---|
| Article Number | 10103 | |
| Number of page(s) | 5 | |
| Section | Semiconductors and Devices | |
| DOI | https://doi.org/10.1051/epjap/2012120316 | |
| Published online | 31 October 2012 | |
https://doi.org/10.1051/epjap/2012120316
DC and RF characteristics of bilayer Schottky metal contact on n-GaN Schottky diode
1
School of Physics, Universiti Sains Malaysia, 11800 Minden, Penang, Malaysia
2
School of Electrical and Electronics Engineering, Universiti Sains Malaysia, 11800 Minden, Penang, Malaysia
a e-mail: tariqmunir76@yahoo.com
Received:
3
August
2012
Accepted:
25
September
2012
Published online:
31
October
2012
In device technology, the multilayer contacts provide improved performance. The comparative study of different high work function bilayer Schottky metal (Pt/Pd, Pt/Ni and Pt/Ti) contact has been taken to study the DC and RF performance of n-GaN Schottky diode. The fabricated Schottky metal contact Pt/Pd, Pt/Ni and Pt/Ti annealed from room temperature to 800 °C studied shows that Pt/Pd Schottky metal contact on n-GaN shows high thermal stability and maximum barrier height 1.10 eV, ideality factor 1.001, lower series resistance and lower insertion loss (S21 dB) at high frequency compared to Pt/Ni and Pt/Ti bilayer Schottky metal contact.
© EDP Sciences, 2012
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.