Eur. Phys. J. Appl. Phys.
Volume 65, Number 3, March 2014
|Number of page(s)||6|
|Section||Semiconductors and Devices|
|Published online||03 March 2014|
A compact model of subthreshold characteristics for short channel double-gate junctionless field effect transistors
School of Information Science and Engineering, Shenyang University of Technology, Shenyang
110870, P.R. China
2 School of Electronics Engineering, Kyungpook National University, 1370 Sangyuk-Dong Buk-Gu, Daegu 702-701, Korea
3 School of EECS Engineering and ISRC (Inter-University Semiconductor Research Center), Seoul National University, Shinlim-Dong, Kwanak-Gu, Seoul 151-742, Korea
a e-mail: firstname.lastname@example.org
Revised: 6 August 2013
Accepted: 15 November 2013
Published online: 3 March 2014
A compact subthreshold characteristics model for short channel fully-depleted double-gate (DG) junctionless field effect transistors (JL FETs) which is based on an approximated solution of 2 dimensional Poisson’s equation has been proposed. The derivation details are introduced and the model’s accuracy has been verified by comparison with both previous models and the TCAD simulations’ results which proves that the subthreshold characteristics such as channel potential distribution, subthrethold drain-to-source current, subthreshold slope, drain-induced-barrier-lowering and threshold voltage can be accurately predicted by our proposed compact model.
© EDP Sciences, 2014
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